Drift of the breakdown voltage in p-n junctions in silicon (walk-out): J. F. Verwey, A. Heringa, R. De Werdt and W. v. d. Hofstad. Solid-St. Electron.20, 689 (1977)

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 132 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(78)91193-9