✦ LIBER ✦

Drift in switched-capacitor integrators

✍ Scribed by D. MacQuigg; T. Somerville

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 710 KB
Volume: 15
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(84)80006-3

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✦ Synopsis

Imperfections in MOS devices which cause drift over time in the output voltage of a switched-capacitor integrator include junction leakage, offset voltages, charge pumping, and charge-injection (clock feedthroughl from the switches. The origins of these imperfections and techniques to minimise their effect are discussed. With careful processing and design, total drift in a typical CMOS integrator can be reduced to less than one femtoampere and one femtocoulomb per switch cycle. Such high precision integrators may be used as "storage registers" in many systems requiring accurate retention of an analog value.

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