Drift-free 10-kV, 20-A 4H-SiC PiN diodes
✍ Scribed by Brett A. Hull; Mrinal K. Das; Joseph J. Sumakeris; James T. Richmond; Sumi Krishnaswami
- Book ID
- 107453399
- Publisher
- Springer US
- Year
- 2005
- Tongue
- English
- Weight
- 259 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
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## Abstract 3kV, 600A 4H‐SiC high‐temperature flat‐package diodes have been developed for use in electricity supply. They consist of a pressure contact flat package and include five 6 mm × 6 mm SiC diode chips. These flat‐package diodes have a thermal resistance of 0.21 deg/W, which is ten times th
## Abstract 3‐kV, 600‐A, 4H‐SiC flat package type pn diodes have been developed and their reverse recovery characteristics have been investigated. In spite of being pn junction diodes, the developed diodes have a short reverse recovery time of 0.153µs at room temperature. These diodes have one‐tent