✦ LIBER ✦

Drift-Diffusion Modeling for Impurity Photovoltaic Devices

✍ Scribed by Lin, A.S.; Phillips, J.D.

Book ID: 114619815
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 917 KB
Volume: 56
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2009.2032741

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

SB–PE drift-diffusion algorithm for FET

SB–PE drift-diffusion algorithm for FET devices global modeling

✍ Leuzzi, Giorgio; Stornelli, Vincenzo 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 550 KB

Large drift-diffusion and Monte Carlo mo

Large drift-diffusion and Monte Carlo modeling of organic semiconductor devices

✍ A. Bolognesi; A. Di Carlo; P. Lugli; G. Conte 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Modeling anti-islanding protection devic

Modeling anti-islanding protection devices for photovoltaic systems

✍ Mei Xu; Roderick V.N. Melnik; Uffe Borup 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 671 KB

An augmented drift-diffusion model in a

An augmented drift-diffusion model in a semiconductor device

✍ Avner Friedman; Wenxiong Liu 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 380 KB

Simulation Tool for Equivalent Circuit M

Simulation Tool for Equivalent Circuit Modeling of Photovoltaic Devices

✍ Eidelloth, Stefan; Haase, Felix; Brendel, Rolf 📂 Article 📅 2012 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 680 KB

A Coupled Schrödinger Drift-Diffusion Mo

A Coupled Schrödinger Drift-Diffusion Model for Quantum Semiconductor Device Simulations

✍ P. Degond; A. El Ayyadi 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this paper, we derive a coupled Schrödinger drift-diffusion self-consistent stationary model for quantum semiconductor device simulations. The device is decomposed into a quantum zone (where quantum effects are expected to be large) and a classical zone (where they are supposed negligible). The S