Double injection into high-purity silicon using metal contacts

Growth kinetics of stoichiometric SiC la

Growth kinetics of stoichiometric SiC layers formed by high fluence carbon implantation into silicon using a metal vapor vacuum arc ion source

✍ L. Wang; Y.E. Zhao; Dihu Chen; S.P. Wong 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 339 KB

SiC layers were formed by implantation of C + into silicon at 35 keV to fluence of 1 • 10 18 cm À2 . Thermal annealing was performed at 900 °C for various time intervals from 1 h to 8 h, and at various temperatures from 700 °C to 1200 °C for 2 h in nitrogen ambient. The phase transformation characte