Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy

✍ Scribed by Boussairi Bouzazi; Hidetoshi Suzuki; Nobuaki Kojima; Yoshio Ohshita; Masafumi Yamaguchi

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 556 KB
• Volume: 406
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2010.11.086