Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon

✍ Scribed by P Lévêque; A Hallén; P Pellegrino; B.G Svensson; V Privitera

• Book ID: 114165182
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 258 KB
• Volume: 186
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(01)00897-7