Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

✍ Scribed by K. Hayama; K. Takakura; M. Yoneoka; H. Ohyama; J.M. Rafí; A. Mercha; E. Simoen; C. Claeys

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 310 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.125