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Doping of PbTe and Pb1−xSnxTe with gallium and indium

✍ Scribed by Dr. Sh. M. Duguzhev; A. V. Makhin; Dr. V. A. Moshnikov; Dr. A. I. Shelykh

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
260 KB
Volume
25
Category
Article
ISSN
0232-1300

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✦ Synopsis

Precipitations in Indium and Gallium-doped PbTe, SnTe and Pb, -,Sn,Te are investigated. The compositions of the precipitated phases are PbGa6Telo SnGa6Telo and PbIn6Tel0 for binary compounds. For Pb, -,Sn,Te the precipitated phase composition corresponds to the continuous solid solutions Pbl -,Sn,Ga6Telo. Basic properties of the new compounds are determined. Their resistivity being of 5 +-6 orders higher than that for Pb(Sn)Te, the anomalous transfer phenomena, observed in highly Ga(1n)-doped samples can be explained on the basis of the barrier model.

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