Doping dependence of the G-band Raman spectra of an individual multiwall carbon nanotube

✍ Scribed by Sebastien Nanot; Marius Millot; Bertrand Raquet; Jean-Marc Broto; Arnaud Magrez; Jesus Gonzalez

• Book ID: 104087016
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 461 KB
• Volume: 42
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2010.06.006

✦ Synopsis

We present a gate-dependent Raman spectroscopy and electric transport measurements of an individually connected multiwall carbon nanotube in the field-effect transistor configuration at room temperature. We discuss the origin of the four distinct sharp modes in the G-band feature. The overall G-band is blueshifted by tuning the Fermi level under a back-gate voltage. Each mode experiences different energy shifts symmetrical for n and p doping. Assuming that the four peaks can be tentatively assigned to four different shells of the multiwall carbon nanotube, we propose a simple quantitative analysis which unravels intershell charge transfer within the nanotube.