✦ LIBER ✦
Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD
✍ Scribed by Kil, Yeon-Ho; Yang, Hyeon Deok; Yang, Jong-Han; Kang, Sukill; Jeong, Tae Soo; Choi, Chel-Jong; Kim, Taek Sung; Shim, Kyu-Hwan; Kim, Dae-Jung
- Book ID
- 121538165
- Publisher
- The Korean Physical Society
- Year
- 2014
- Tongue
- English
- Weight
- 519 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0374-4884
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