Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

✍ Scribed by Sung-Jin Choi; Jin-Woo Han; Sungho Kim; Dong-Il Moon; Moongyu Jang; Yang-Kyu Choi

• Book ID: 114620159
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 601 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2065233