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Dopant Redistribution during Rapid Thermal Annealing in a Self-Aligned Polysilicon Emitter Bipolar Structure Compatible with a Complementary Metal-Oxide-Semiconductor Technology

✍ Scribed by Merabet, A. ;Gontrand, C.


Book ID
105384292
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
619 KB
Volume
145
Category
Article
ISSN
0031-8965

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