𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

✍ Scribed by V.P. Kesan; S.S. Iyer; J.M. Cotte


Book ID
107791888
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
612 KB
Volume
111
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Antimony incorporation in InAs quantum d
✍ J. Rihani; V. Sallet; H.J. Christophe; M. Oueslati; R. Chtourou πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 272 KB

We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo