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Domain growth of Si(111)-5 × 2 Au by high-temperature STM

✍ Scribed by Tsuyoshi Hasegawa; Sumio Hosaka; Shigeyuki Hosoki


Book ID
116068346
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
624 KB
Volume
357-358
Category
Article
ISSN
0039-6028

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In situ STM imaging of high temperature
✍ A. Feltz; U. Memmert; R.J. Behm 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 665 KB

Gas phase etching of Si( 111) (7 x 7) surfaces, by reaction with O2 at zz 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 X 7) surface layer, which can act as nucleation centers for pit