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Distribution of exit silicon ions over excited states after penetrating through carbon foils at 2.65, 4.3 and 6.0 MeV/u

โœ Scribed by T. Miyoshi; K. Noda; H. Tawara; I.Yu. Tolstikhina; V.P. Shevelko


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
601 KB
Volume
258
Category
Article
ISSN
0168-583X

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