Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100)

✍ Scribed by Hideki Nakazawa; Maki Suemitsu

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 163 KB
• Volume: 162-163
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00182-3

✦ Synopsis

Ž

. Dissociative adsorption of monomethylsilane MMS , a promising precursor gas for low-temperature SiC, has been Ž . Ž . investigated on Si 100 by using temperature-programmed desorption TPD method after its comparison with Hr and Ž .

Ž . C H rSi 100 surfaces. For both MMSr and C H rSi 100 , the b peak from SiH species showed a shift to higher 2 2 2 2 1 temperatures in the presence of surface C atoms, while two new peaks appeared separately for the two gases: g peak Ž . Ž . Ž . ;6408C for the C H r and d peak ; 8708C for the MMSrSi 100 . The g peak is suggested to be from hydrogen 2 2 desorption from SiH species at which a C atom is inserted to its backbond. The d peak is related to desorption from surface Ž . CH species. The absence of the g peak on MMSrSi 100 suggests absence of atomic exchange between surface C and x substrate Si atoms on its adsorption.