Dissociation of dislocations and the mobility of partial dislocations in elemental semiconductors

✍ Scribed by Vanderschaeve, G. ;Caillard, D.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 107 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460540

✦ Synopsis

Abstract

From a theoretical analysis of the energy of dissociated dislocations moving in a periodic Peierls potential, it is shown that metastable dissociation configurations are expected, the range of which is asymmetrically distributed with respect to the equilibrium dissociation distance. In the course of this investigation, we have reexamined the literature data on the dissociation of dislocations in high‐stress deformed silicon. It is concluded that the experimental results can be interpreted in a consistent way without the assumption of different mobilities for leading or trailing partials. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)