✦ LIBER ✦

Disorders produced during high-current and high-dose phosphorus ion implantation in silicon

✍ Scribed by M. Tamura; K. Yagi; N. Natsuaki; M. Miyao; T. Tokuyama

Book ID: 104993269
Publisher: Springer
Year: 1979
Tongue: English
Weight: 717 KB
Volume: 20
Category: Article
ISSN: 1432-0630
DOI: 10.1007/bf00886022

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