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Dislocations formed under longitudinal stress field in epitaxial-lateral-overgrowth GaN

✍ Scribed by Duanjun Cai; Junyong Kang; Shun Ito

Book ID: 103846413
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 206 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.01.002

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✦ Synopsis

Dislocation semi-loops in the lateral epitaxial region of GaN have been observed and characterized using transmission electron microscopy. The loops are not coplanar in a (0 0 0 1) close-packed plane and the motion of vertical glide is found. The Burgers vectors are determined to be parallel to [0 0 0 1] direction. These evidences demonstrate that a c-axial stress field exists in the lateral region transited from the in-plane stress of the window region. The value and distribution of this special stress field have been measured via Auger electron spectroscopy.

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