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Dislocation reduction in GaN with multiple Mg[sub x]N[sub y]âGaN buffer layers by metal organic chemical vapor deposition

✍ Scribed by Tun, C. J.; Kuo, C. H.; Fu, Y. K.; Kuo, C. W.; Pan, C. J.; Chi, G. C.

Book ID: 120282994
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 585 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2742590

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