Simulation of the interaction between an
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D. Terentyev; P. Grammatikopoulos; D.J. Bacon; Yu. N. Osetsky
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Article
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2008
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Elsevier Science
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English
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Atomic-level simulations are used to investigate the interaction of an edge dislocation with h1 0 0i interstitial dislocation loops in airon at 300 K. Dislocation reactions are studied systematically for different loop positions and Burgers vector orientations, and results are compared for two diffe