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Dislocation-free GaAs by the liquid encapsulation technique

✍ Scribed by B.C Grabmaier; J.G Grabmaier

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of dislocations in highly in doped

✍ B. Pichaud; N. Burle-Durbec; F. Minari; M. Duseaux 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 502 KB

Elimination of grown-in dislocations in

✍ K. Yamada; H. Kohda; H. Nakanishi; K. Hoshikawa 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 664 KB

Growth of twin-free InP single cystals b

✍ Fumio Matsumoto; Yasunori Okano; Yonenaga Ichiro; Hoshikawa Keigo; Tsuguo Fukuda 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 494 KB

Heat transfer during GaAs growth of bulk

✍ Suzuki, Tomonari; Okano, Yasunori; Hoshikawa, Keigo; Fukuda, Tsuguo 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 282 KB

Dislocation-free GaAs and InP crystals b

✍ G. Jacob; M. Duseaux; J.P. Farges; M.M.B. van den Boom; P.J. Roksnoer 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 889 KB

Effect of crystal shape on etch-pit-dens

✍ Koji Usuda; Takashi Fujii 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 635 KB