Dislocation-enhanced electron-electron scattering in the resistivity of copper

✍ Scribed by J. Sprengel; G. Thummes

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 243 KB
• Volume: 165-166
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/s0921-4526(90)80975-o

✦ Synopsis

From our measurements of the electrical resistivity of gradually strained Cu-whiskers between T=0.4 and 2 K the variation of the Tacoefficient A of the electron-electron scattering term with dislocation density is determined. Furthermore, we calculate the enhancement of A by dislocation-induced anisotropy using a "two band" model for the electron-dislocation relaxation time. For dislocation densities less than 1010 cm-8 the measured increase of A upon straining is in quantitative agreement with our model. At higher densities we observe a decrease of A which may be attributed to a cross-over from small-to large angle scattering.