Ultrahigh vacuum scanning tunnelling mic
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Bolotov, L. N.; Nakamura, A.; Evtikhiev, V. P.; Tokranov, V. E.; Titkov, A. N.
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Article
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1999
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John Wiley and Sons
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English
⚖ 372 KB
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The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied