✦ LIBER ✦

Directed self-assembly process for nano-electronic devices and interconnect

✍ Scribed by Edwin C. Kan; Zengtao Liu

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 754 KB
Volume: 27
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0851

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✦ Synopsis

Requirements for nano-electronic devices and interconnect in conventional logic circuit architecture are examined to reveal the possible device structure containing self-assembly (SA) features. For integration with lithography, we discuss the features of the SA process and then present a full process flow for a novel type of SA nano-crystal EEPROM cells. The logic functionality below the lithography limit derived from the SA dot arrays and the I -V characteristics including the Coulomb blockade effect are then presented.

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