We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect
Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields
β Scribed by L.E. Oliveira; M. de Dios-Leyva; C.A. Duque
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 138 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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