Originally the dipole trap scattering model was treated with several approximations and limitations in order to obtain an analytical solution for the temperature and density dependence of the resistivity of high-mobility Si-MOS structures. In contrast, we perform numerical calculations within this m
✦ LIBER ✦
Dipole trap model for the metal-insulator transition in gated silicon-inversion layers
✍ Scribed by Hörmann, T.; Brunthaler, G.
- Book ID
- 120303969
- Publisher
- The American Physical Society
- Year
- 2010
- Tongue
- English
- Weight
- 534 KB
- Volume
- 82
- Category
- Article
- ISSN
- 1098-0121
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