Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

✍ Scribed by Dorrance, Richard; Alzate, Juan G.; Cherepov, Sergiy S.; Upadhyaya, Pramey; Krivorotov, Ilya N.; Katine, Jordan A.; Langer, Juergen; Wang, Kang L.; Amiri, Pedram Khalili; Markovic, Dejan

• Book ID: 120377388
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 530 KB
• Volume: 34
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2013.2255096