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Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors

โœ Scribed by Liu, W.; Harris, J.S., Jr.

Book ID
114534969
Publisher
IEEE
Year
1992
Tongue
English
Weight
675 KB
Volume
39
Category
Article
ISSN
0018-9383

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Experimental evaluation of separate cont
Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistors
โœ S.R.D. Kalingamudali; A.C. Wismayer; R.C. Woods ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 328 KB

In this paper it is shown experimentally, for the first time, that the ideality factor n for the extrinsic base surface recombination current in A1GaAs/GaAs heterojunction bipolar transistors (HBTs)is unity and is bias independent. The devices with various emitter radii have been fabricated and the