An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 Β°C. Examining the therma
β¦ LIBER β¦
Diffusion of Xe in Ta, Zr, and Pt
β Scribed by T. Warner; G. Ball; J.A. Behr; T.E. Chupp; P. Finlay; G. Hackman; M.E. Hayden; B. Hyland; K. Koopmans; S.R. Nuss-Warren; M.R. Pearson; A.A. Phillips; M.A. Schumaker; M.B. Smith; C.E. Svensson; E.R. Tardiff
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 423 KB
- Volume
- 538
- Category
- Article
- ISSN
- 0168-9002
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