✦ LIBER ✦

Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy

✍ Scribed by D. De Salvador; E. Napolitani; S. Mirabella; G. Impellizzeri; F. Priolo; A. Terrasi; G. Bisognin; M. Berti; A.V. Drigo; A. Carnera

Book ID: 113822695
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 291 KB
Volume: 216
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2003.11.048

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defects in molecular beam epitaxy grown

Defects in molecular beam epitaxy grown GaAlAs layers

✍ Feng, S. L.; Zazoui, M.; Bourgoin, J. C. 📂 Article 📅 1989 🏛 American Institute of Physics 🌐 English ⚖ 423 KB

Erbium Segregation in Silicon Layers Gro

Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy

✍ V. G. Shengurov; S. P. Svetlov; V. Yu. Chalkov; G. A. Maksimov; Z. F. Krasil'nik 📂 Article 📅 2002 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 43 KB

Origin of oval defects in GaAs layers gr

Origin of oval defects in GaAs layers grown by molecular beam epitaxy

✍ K. Akimoto; M. Dohsen; M. Arai; N. Watanabe 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 621 KB

Crystalline defects in ZnSe layers grown

Crystalline defects in ZnSe layers grown by gas source molecular beam epitaxy

✍ Yasuyuki Endoh; Junji Tanimura; Masayuki Imaizumi; Muneyoshi Suita; Ken-ichi Oht 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Minority carrier diffusion and defects i

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

✍ Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jone 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 373 KB

Crystal defects in InGaAlAs layers grown

Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxy

✍ C. Bocchi; C. Ferrari; P. Franzosi; F. Genova; R. Gleichmann; B. Jenichen; C. Ri 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 946 KB