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Diffusion of In atoms in InGaN ultra-thin films during post-growth thermal annealing by high-resolution Rutherford backscattering spectrometry

✍ Scribed by H. Sakuta; Y. Kawano; Y. Yamanaka; S. Kurai; T. Taguchi


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
127 KB
Volume
2
Category
Article
ISSN
1862-6351

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