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Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
✍ Scribed by Castaldini, A.; Cavallini, A.; Rigutti, L.; Pizzini, S.; Le Donne, A.; Binetti, S.
- Book ID
- 120350602
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 318 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0021-8979
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