Diffusion kinetics in AlSi composition-modulated films by isothermal resistivity-annealing
✍ Scribed by M. Patrick Dugan; Thomas Tsakalakos
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 552 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
✦ Synopsis
The dlffhston kmettcs of the alumlnum-slhcon system at low temperatures has been charactertzed by a novel techmque Thl~ techmque employs samples ~onststmg of alternating layers of aluminum and 9thcon and permtts the chatactertzatton of the dtffuston kmettcs at the AI-St rater]ace through the cumulative effects oJ several hundred Interfaces while mmtmtzmg the effects of bulk material
The lest~tlwty of these films was momtored by the jour-potnt probe techntque during tsothermal anneahng at temperatures m the range 75-150 °C The reststtvlty was observed to increase mtttally and later decrease, eventually stabthzmg at a value lower than the starting reststtvtty The increase m reststtvlty lA attrtbuted to an increase m dtsorder caused by sthcon dtffusmg into the aluminum layers The decrease m reststtvtty ts attributed to stress rehef m the film Analysts of the data has allowed the calculation of dtffuston coefflctents, thermal activation energy of dtffuston and the gradtent energy coefficwnt