We prove global existence of weak solutions of the drift diffusion model for semiconductors coupled with Maxwell's equations for the electromagnetic field by using a Galerkin method. The recombinations term for the density of electrons and holes may depend on the densities, the gradient of the densi
Diffusion Approximation for the Linear Boltzmann Equation of Semiconductor Theory with Analysis of the Initial Layer
β Scribed by J Banasiak
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 243 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0022-247X
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