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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO[sub 2] interface

✍ Scribed by Hamilton, J. J.; Cowern, N. E. B.; Sharp, J. A.; Kirkby, K. J.; Collart, E. J. H.; Colombeau, B.; Bersani, M.; Giubertoni, D.; Parisini, A.


Book ID
120159332
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
384 KB
Volume
89
Category
Article
ISSN
0003-6951

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