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Diffuse X-ray scattering from partially transformed 3C–SiC single crystals

✍ Scribed by D. Dompoint; A. Boulle; I.G. Galben-Sandulache; D. Chaussende

Book ID
113823690
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
540 KB
Volume
284
Category
Article
ISSN
0168-583X

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Determination of stacking fault densitie
Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering
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## Abstract Thick 3C‐SiC single crystals grown by continuous‐feed physical vapor transport (CF‐PVT) are studied by high‐resolution X‐ray reciprocal space mapping. These crystals contain Shockley‐type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along