Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers

✍ Scribed by Huang, C. C.; Xu, F. J.; Song, J.; Xu, Z. Y.; Wang, J. M.; Zhu, R.; Chen, G.; Wang, X. Q.; Yang, Z. J.; Shen, B.; Chen, X. S.; Lu, W.

• Book ID: 121304341
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 840 KB
• Volume: 111
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3676266