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Different oxides used as diffusion barriers in composite hydrogen permeable membranes

✍ Scribed by D. Yepes; L.M. Cornaglia; S. Irusta; E.A. Lombardo

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
583 KB
Volume
274
Category
Article
ISSN
0376-7388

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Atomic layer deposition of tantalum oxid
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Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform