Differences between nanoscale structural and electrical properties of AZO:N and AZO used in polymer light-emitting diodes
✍ Scribed by Sy-Hann Chen; Chang-Feng Yu
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 187 KB
- Volume
- 73
- Category
- Article
- ISSN
- 1059-910X
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✦ Synopsis
Abstract
Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N‐doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental results demonstrated that when the substrate temperature is 150°C and the N~2~O background pressure is 150 mTorr, the N‐dopant concentration on the surface is optimal. In addition, the root‐mean‐square roughness value of the film surface, the low contact current (<400 nA) conducting region as a percentage of the total area, and the mean work function value are 1.43 nm, 96.9%, and 4.88 eV, respectively, all of which are better than those of the optimal AZO film made by PLD. This result indicates that N‐doped AZO films are better for use as window materials in polymer light‐emitting diodes. Microsc. Res. Tech., 2010. © 2009 Wiley‐Liss, Inc.