✦ LIBER ✦
Dielectric Relaxation and Charge Trapping Characteristics Study in Germanium Based MOS Devices With Gate Stacks
✍ Scribed by Rahman, M.S.; Evangelou, E.K.
- Book ID
- 114620637
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 931 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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