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Dielectric properties of BiFeO3-PbTiO3 thin films prepared by PLD

✍ Scribed by Rui CHEN; Sheng-wen YU; Guan-jun ZHANG; Jin-rong CHENG; Zhong-yan MENG

Book ID
117693063
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
261 KB
Volume
16
Category
Article
ISSN
1003-6326

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BiFeO 3 thin films were grown by metal organic chemical vapour deposition (MOCVD) at the temperature T = 700 Β°C using Fe(thd) 3 , Bi (C 6 H 5 ) 3 as volatile precursors. High thermal stability of Bi(C 6 H 5 ) 3 makes the film stoichiometry very sensible to the deposition conditions, in particular to