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Dielectric function of GaAsAlAssuperlattices grown on GaAs substrates with different orientation

✍ Scribed by F. Lukeš; K. Ploog


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
510 KB
Volume
233
Category
Article
ISSN
0040-6090

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The effect of the orientation on intersubband tunneling process in Al Ga AsrGaAs asymmetric double quantum 0.35 0.65 Ž . Ž . Ž . Ž . wells ADQWs grown on GaAs n11 A n F 4 substrates was studied by cw photoluminescence PL , time-resolved Ž . Ž . photoluminescence TRPL at low temperatures and transmis