DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

✍ Scribed by Myounggon Kang; Wookghee Hahn; Il Han Park; Juyoung Park; Youngsun Song; Hocheol Lee; Changgyu Eun; Sanghyun Ju; Kihwan Choi; Youngho Lim; Seunghyun Jang; Seongjae Cho; Byung-Gook Park; Hyungcheol Shin

• Book ID: 114620624
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 487 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2161313