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Diamond thin film growth on silicon at temperatures between 500 and 600 °C using an electron cyclotron resonance microwave plasma source

✍ Scribed by C.R. Eddy Jr.; B.D. Sartwell; D.L. Youchison


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
969 KB
Volume
48
Category
Article
ISSN
0257-8972

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