✦ LIBER ✦

Diagnostics of impurities in ion beams by carbon probes

✍ Scribed by A. Pospieszczyk; H.L. Bay; B. Schweer

Publisher: Elsevier Science
Year: 1980
Tongue: English
Weight: 498 KB
Volume: 93-94
Category: Article
ISSN: 0022-3115
DOI: 10.1016/0022-3115(80)90354-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Backscattering analysis of impurities in

Backscattering analysis of impurities in the ion beams

✍ Yuen-Chung Liu; Cheng-Fong Chou; Wu-Shiung Hsu; Jer-Shen Maa 📂 Article 📅 1978 🏛 Elsevier Science ⚖ 244 KB

Equilibrium charge distributions of ion

Equilibrium charge distributions of ion beams in carbon

✍ P. Hvelplund; E. Lægsgård; J.Ø. Olsen; E.H. Pedersen 📂 Article 📅 1970 🏛 Elsevier Science ⚖ 390 KB

Properties of amorphous carbon films dep

Properties of amorphous carbon films deposited by ion beam methods

✍ D.B. Kerwin; I.L. Spain; R.S. Robinson; B. Daudin; M. Dubus; J. Fontenille 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 568 KB

Vaporization of impurities in copper, in

Vaporization of impurities in copper, including those introduced by ion bombardment∗

✍ E. Ruedl; R.C. Bradley 📂 Article 📅 1962 🏛 Elsevier Science 🌐 English ⚖ 512 KB

Ion-beam-induced crystallization of carb

Ion-beam-induced crystallization of carbon-implanted silicon studied by auger electron spectroscopy

✍ Steffen, Hans Joachim 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 501 KB

The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.

Physical properties of nitrogenated amor

Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

✍ François Rossi; Bernard Andre; A. van Veen; P.E. Mijnarends; H. Schut; F. Labohm 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 438 KB