Device physics and simulation of Metal/Ferroelectric-Film/p-type silicon capacitors
✍ Scribed by Hisham Z. Massoud
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 258 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists of a switching ferroelectric layer and two nonswitching dielectric or buffer layers. This model predicts the dependence of the polarization charge density Pd, the electric field in the ferrolelectric film £j,, the voltage across the dielectric stack Vox, the semiconductor surface potential Csc, and the semiconductor charge density Qsc on the gate-to-bulk voltage VGB under static conditions. The low-and high-frequency capacitance-voltage characteristics of MFS capacitors are calculated.