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Device Performance of Silicon Nanotube Field Effect Transistor

โœ Scribed by Tekleab, Daniel


Book ID
126769451
Publisher
IEEE
Year
2014
Tongue
English
Weight
741 KB
Volume
35
Category
Article
ISSN
0741-3106

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High Performance Silicon Nanowire Field
โœ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› American Chemical Society ๐ŸŒ English โš– 156 KB

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n