𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode hole fluence

✍ Scribed by Jeong-Hyong Yi; Sang-Don Lee; Jin-Hong Ahn; Hyungcheol Shin; Young-June Park; Hong Shick Min


Book ID
108207483
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
551 KB
Volume
80
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.